| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5354770 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠High quality GaSb layers have been grown on GaAs (0 0 1) substrates. ⺠The influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers has been investigated. ⺠It has been found that the Sb-rich GaAs substrate surface preparation can promote the growth of high-quality GaSb material. ⺠The p-type nature of the unintentionally doped GaSb has been studied and the main native acceptor in the GaSb is the Ga antisite (GaSb) defect.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yanbo Li, Yang Zhang, Yuwei Zhang, Baoqiang Wang, Zhanping Zhu, Yiping Zeng,