Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5354823 | Applied Surface Science | 2015 | 6 Pages |
Abstract
Aurivillius phase Bi7Fe3(Ti3 â xWx)O21 + δ (x = 0 and 0.06) thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by using a chemical solution deposition method. The W6+-ion doped Bi7Fe3Ti3O21 thin film exhibited tremendous improvements in the electrical and multiferroic properties, namely a low leakage current density, good stability against electrical breakdown, large ferroelectric polarization and large magnetization as compared to the un-doped thin film. The Bi7Fe3(Ti2.94W0.06)O21 + δ thin film was stable against electrical break down at applied electric fields up to 1275 kV/cm, at which the measured remnant polarization (2Pr) and the coercive field (2Ec) values were 33.5 μC/cm2 and 825 kV/cm, respectively whereas, the measured 2Pr value of the un-doped Bi7Fe3Ti3O21 thin film was 3.5 μC/cm2 at an applied electric field of 318 kV/cm. Furthermore, the Bi7Fe3(Ti2.94W0.06)O21 + δ thin film showed a well-saturated ferromagnetic hysteresis loop with large magnetization at room temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Jong-Woo Kim, Sang Su Kim,