Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5354870 | Applied Surface Science | 2015 | 5 Pages |
Abstract
Bi-layered back contact structures consisting of Mo-capping and Na-doped Mo layers have been investigated for the purpose of providing extra Na for CuIn0.7Ga0.3Se2 (CIGS) absorbers for high efficiency solar cells on a stainless steel substrate. This approach utilizing a thick back contact layer does not require a buffer layer on the substrate. The cell performance depends largely on the content of Na in the Mo:Na layer as Na easily diffuses into the absorber layer. The best cell efficiency of 15.04% is obtained for the cell incorporating the 600Â nm Mo-capping and 900Â nm 10% Na-incorporating Mo layers. This enhancement is attributed mainly due to the substantial increase of Voc as a result of higher carrier concentration and lower leakage current of the extra Na-involved absorber.
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Authors
Myeongho Lee, Seung Min Lee, Seungchul Jung, Seunggyu Ahn, Jun-Sik Cho, Juhyeong Park, Yeongju Eh, Jihye Gwak, Keeshik Shin, Kyunghoon Yoon, Yong Soo Cho, Jae Ho Yun,