| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5354887 | Applied Surface Science | 2016 | 18 Pages |
Abstract
- Silicon nanowire structures (SiNWs) obtained by MACE present low minority carrier lifetime.
- Carrier recombinations in SiNWs are attributed to SRH traps related to SiOx dangling bonds and structural dislocation.
- Hydrogen passivation enhances the effective minority carrier lifetime.
- Hydrogen passivation efficiency of SiNWs is limited by structural dislocation.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. Aouida, R. Benabderrahmane Zaghouani, N. Bachtouli, B. Bessais,