Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5355069 | Applied Surface Science | 2011 | 7 Pages |
Abstract
⺠Plasma enhanced CVD at relatively low synthesis temperature. ⺠Vertically aligned CNTs on semiconducting silicon wafer. ⺠CNT average length increases with plasma power and decreases with distance to plasma. ⺠Selective growth of few-walled and single-walled CNTs by tuning the catalyst thickness. ⺠Single-walled CNTs exhibit better field emission characteristics than the few-walled CNTs.
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Authors
Mihnea Ioan Ionescu, Yong Zhang, Ruying Li, Xueliang Sun,