BiFeO3/Zn1−xMnxO bilayered thin films

BiFeO3/Zn1−xMnxO (x = 0-0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2Pr ∼ 121.0-130.6 μC/cm2 was measured for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO (x = 0.04) bilayer exhibits a highest Ms value of ∼15.2 emu/cm3, owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced Ms value.

► Bilayered BiFeO3/Zn1−xMnxO (x = 0-0.08) thin films have highly (1 1 0) orientation. ► Diode-like and resistive hysteresis behavior is demonstrated for all bilayers. ► A large remanent polarizationof 2Pr ∼ 121.0-∼130.6 μC/cm2 for all bilayers. ► A highest Ms value of ∼15.2 emu/cm3 for BiFeO3/Zn1−xMnxO (x = 0.04).