| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355078 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠The deposition of GaAs epilayer using LMBE was achieved. ⺠Chemistry evolution of GaAs epilayer during deposition was investigated using in situ XPS. ⺠The growth process is heavily influenced by the surface chemistry and morphology of thermally desorbed GaAs substrate. ⺠It is found that a predominant step flow growth mode for the growth of GaAs by LMBE in this study. ⺠The incorporation of As species into GaAs epilayer is more efficient in LMBE than conventional MBE.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Dawei Yan, Weidong Wu, Hong Zhang, Xuemin Wang, Hongliang Zhang, Weibin Zhang, Zhengwei Xiong, Yuying Wang, Changle Shen, Liping Peng, Shangjun Han, Minjie Zhou,