Article ID Journal Published Year Pages File Type
5355085 Applied Surface Science 2011 4 Pages PDF
Abstract
► Thin film transistors with Ti added In-Zn-O as channel layer materials. ► Threshold voltage shows positive shift as Ti content increases. ► Positive shift is induced by suppression of oxygen vacancies in channel layer. ► Field effect mobility is not decreased as Ti content increases.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Study of Ti addition in channel layers for In-Zn-O thin film transistors
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