| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355175 | Applied Surface Science | 2015 | 5 Pages |
Abstract
The influence of annealing temperature, As4 beam equivalent pressure and multi-runs growth on AlGaAs/GaAs structures was investigated. The real space ultrahigh vacuum scanning tunneling microscopy images showed that AlGaAs/GaAs surface morphology greatly depends on annealing conditions and initial state of surface. The reasons of the surface phenomenon are proposed, and a physical model was proposed to explain why the multi-runs growth structures can increase AlGaAs surface roughness. The reasonable preparation conditions for AlGaAs/GaAs structures were proposed.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Wenzhe Wei, Yi Wang, Xiang Guo, Zijiang Luo, Zhen Zhao, Haiyue Zhou, Zhao Ding,