Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5355220 | Applied Surface Science | 2016 | 21 Pages |
Abstract
For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1Â 1Â 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where Ï and Ï bands of graphene, are observed. Graphene's ÎK direction is aligned with the ÎK direction of the substrate, indicating no significant contribution from rotated domains.
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Authors
Apostolis Kordatos, Nikolaos Kelaidis, Sigiava Aminalragia Giamini, Jose Marquez-Velasco, Evangelia Xenogiannopoulou, Polychronis Tsipas, George Kordas, Athanasios Dimoulas,