Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5355232 | Applied Surface Science | 2016 | 6 Pages |
Abstract
- The resistivity of Ge1Sb4Te7 gradually dropped by about 3-4 orders of magnitude due to crystallization with the annealing temperature, which is critical to realize multiple resistance levels.
- The ultra-multiple 27 resistance levels in TiSi3/GST147 lateral phase-change memory device were demonstrated, much more than reported until now.
- The reproducibility of the six resistance levels without programming algorism such as write-certification were demonstrated and these levels were distinguishable from each other.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
You Yin, Shota Iwashita, Sumio Hosaka, Tao Wang, Jingze Li, Yang Liu, Qi Yu,