| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355232 | Applied Surface Science | 2016 | 6 Pages |
Abstract
- The resistivity of Ge1Sb4Te7 gradually dropped by about 3-4 orders of magnitude due to crystallization with the annealing temperature, which is critical to realize multiple resistance levels.
- The ultra-multiple 27 resistance levels in TiSi3/GST147 lateral phase-change memory device were demonstrated, much more than reported until now.
- The reproducibility of the six resistance levels without programming algorism such as write-certification were demonstrated and these levels were distinguishable from each other.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
You Yin, Shota Iwashita, Sumio Hosaka, Tao Wang, Jingze Li, Yang Liu, Qi Yu,