Article ID Journal Published Year Pages File Type
5355270 Applied Surface Science 2013 5 Pages PDF
Abstract
► We study hydrogenated amorphous Si/Ge multilayers annealed to form SiGe alloy. ► H is released from Si and Ge atoms on annealing. ► Annealing causes surface blistering. ► Released hydrogen is partially trapped in cavities that form blisters by increasing in size. ► Si di-hydrides are formed on the inner surfaces of the cavities/blisters.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers
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