| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355277 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠We determined the resistivity of ultra-thin TiN films in the thickness range 0.65-20 nm using both spectroscopic ellipsometry and electrical test structure methods. ⺠The comparison showed the considerable difference in resistivity obtained from the two methods for films thinner than 4 nm. ⺠The significant difference was attributed to the scattering effects at grain boundaries and interfaces.
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Authors
H. Van Bui, A.Y. Kovalgin, R.A.M. Wolters,