| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355282 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠We studied the influence of the dopant precursor DEZn on GaP nanowire growth in a set of six samples with gradually increased DEZn molar fraction in the reactor. ⺠Precursor influence on the nanowire shape was observed in SEM. ⺠Measurements of NW field-effect transistor (NW-FET) devices showed the influence of the DEZn molar fraction on the nanowire electrical parameters. ⺠When the DEZn molar fraction exceeds 9 Ã 10â6, nanowire growth is hindered and only small stumps and kinked wires are grown.
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Authors
Stanislav Hasenöhrl, Peter EliáÅ¡, Ján Å oltýs, Roman Stoklas, Agáta Dujavová-LaurenÄÃková, Jozef Novák,