| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355284 | Applied Surface Science | 2013 | 7 Pages |
Abstract
⺠The relationship between structural and electrical properties of RF magnetron-sputtered ITO thin layers was studied. ⺠ITO layers grown at surprisingly low temperature of 125 °C exhibited remarkably high value of Hall mobility of 49 cm2/V s. ⺠It was revealed that high Hall mobility is related to domain formations on surface as observed by AFM and SEM. ⺠ITO layers were applied as front contacts in μc-Si:H solar cells on rigid and flexible substrates (maximum efficiency: 8.4%).
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Authors
J. Hotovy, J. Hüpkes, W. Böttler, E. Marins, L. Spiess, T. Kups, V. Smirnov, I. Hotovy, J. KováÄ,