| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355289 | Applied Surface Science | 2013 | 4 Pages |
Abstract
⺠Formation of stoichiometric SiO2 layer with lowest density after chlorine oxidation ⺠KCN/HCN passivation contributes to formation of SiN, SiO and SiOH bonds at the expense of SiCl bonds. ⺠SiCN could not be identified due to overlapping of detected signal with absorption induced by CO2.
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Authors
M. Kopani, M. Mikula, M. Takahashi, J. Rusnák, E. PinÄÃk,