Article ID Journal Published Year Pages File Type
5355296 Applied Surface Science 2013 5 Pages PDF
Abstract
► Use of scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) to quantify composition modulation. ► Quantification of composition modulation in InxGa1−xP layer. ► Absolute variation in Indium content in InxGa1−xP layer of 4.25%. ► The compositional variation of the compound affects the Eg, causing negative effects on the overall efficiency of the device.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Quantification of InxGa1−xP composition modulation by nanometric scale HAADF simulations
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