| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355297 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠Au/a-Si1âxCx/c-Si(p)/Al structures were prepared by PECVD deposition technique. ⺠Electrical and dielectrical properties of amorphous silicon carbide a-Si1âxCx:H films were studied (C-V and I-V measurements). ⺠AFM and FTIR were used to study the surface of prepared films.
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Authors
Milan Perný, Miroslav MikoláÅ¡ek, VladimÃr Å ály, Michal Ružinský, VladimÃr Äurman, Milan Pavúk, Jozef Huran, Juraj Országh, Å tefan MatejÄÃk,