| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355298 | Applied Surface Science | 2013 | 7 Pages |
Abstract
⺠New experimental results of passivation process of Si MOS structures in KCN and/or HCN solutions are presented. ⺠MOS samples annealed under bias at temperatures up to 500 K were investigated. ⺠Mutual relation between density of interface defect states and flat-band voltage of C-V curves has been found.
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Authors
Emil PinÄÃk, Hikaru Kobayashi, Jaroslav Rusnák, Masao Takahashi, Robert Brunner,