| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355303 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠Three MQW InGaAsN/GaAs heterostructures with various nitrogen ratios were compared. ⺠CV method and Deep Level Transient Spectroscopy measurements were used. ⺠Fluctuations in CV curves around 0 V are due to free carriers' emission from QW. ⺠DLTS shows that the similar system of defects is present in all samples. ⺠Multilevel evaluation confirmed the presence of deep level ET1 in all samples.
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Physical and Theoretical Chemistry
Authors
Ľubica StuchlÃková, Ladislav Harmatha, Miroslav Petrus, Jakub Rybár, Ján Å ebok, Beata Åciana, Damian Radziewicz, Damian Pucicki, Marek TÅaczaÅa, Arpád Kósa, Peter Benko, Jaroslav KováÄ, Peter Juhász,