| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355419 | Applied Surface Science | 2011 | 6 Pages |
Abstract
⺠In situ spectroscopic ellipsometry was applied to investigate the etch rate of EUV-induced carbon. ⺠The high etch rate of the EUV-induced carbon is related to the large hydrogen content. ⺠A hydrogenating process precedes the removal of carbon by atomic hydrogen. ⺠Strongest temperature dependence of the etch rate observed on EUV-induced carbon.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Juequan Chen, Eric Louis, Rob Harmsen, Tim Tsarfati, Herbert Wormeester, Maarten van Kampen, Willem van Schaik, Robbert van de Kruijs, Fred Bijkerk,