Article ID Journal Published Year Pages File Type
5355487 Applied Surface Science 2011 6 Pages PDF
Abstract
► We study the insulating properties of high-quality aluminum nitride thin films. ► The films exhibited (0 0 2) preferential orientation and were prepared as MIS. ► The dielectric constant has been found to depend on texture and thickness of films. ► Trapped charges at interface were estimated to be of the order of 1010 cm−2 eV−1.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Electrical characteristics of insulating aluminum nitride MIS nanostructures
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