| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355508 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠Synthesis of GaN nanowires at various growth temperatures, i.e. 750 °C, 850 °C, 900 °C, 950 °C, and 1000 °C. ⺠Study the effect of growth temperatures on the morphological, structural and optical characteristics of GaN nanowires. ⺠Study the presence of phonon replicas in the blue emission of photoluminescence spectra of synthesized GaN nanowires.
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Authors
L.L. Low, F.K. Yam, K.P. Beh, Z. Hassan,