| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355623 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠The properties of ultrathin (0 0 0 1) and (112¯2) InGaN quantum dots were compared. ⺠Polar dots grown at high temperatures exhibited defined truncated morphology. ⺠Indium interdiffusion was reduced under the employed PAMBE growth scheme. ⺠Lenticular semipolar quantum dots can be deposited at lower temperatures. ⺠The indium content in the dots was determined taking a plane stress state.
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Authors
T. Koukoula, A. Lotsari, Th. Kehagias, G.P. Dimitrakopulos, I. Häusler, A. Das, E. Monroy, Th. Karakostas, Ph. Komninou,