Article ID Journal Published Year Pages File Type
5355626 Applied Surface Science 2012 6 Pages PDF
Abstract
► Identification of misfit dislocations (MD) in-plane configuration in InN/GaN interfaces. ► Energetic mapping designates that MD arrays adopt 〈1 1 −2 0〉 line directions with b = 1/3〈2 −1 −1 0〉. ► Local arrangement of the Moiré fringes depends strongly on the thickness of the TEM foil as revealed by HRTEM image simulations. ► Geometric Phase Analysis on simulated images justifies results obtained by energetic mapping.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Atomistic modeling and HRTEM analysis of misfit dislocations in InN/GaN heterostructures
Authors
, , , , , ,