| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355631 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠Exciton recombination in an ensemble of indirect/direct band-gap (In,Al)As/AlAs QDs with type-I band alignment is studied. ⺠Resonant Raman scattering was applied for evaluation of composition at various depths InAlAs/AlAs QDs sandwich structures. ⺠Depth distribution of composition in In(Ga,Al)As alloy layers explained by strain-driven enhanced interdiffusion.
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Physical and Theoretical Chemistry
Authors
O.F. Kolomys, V.V. Strelchuk, T.S. Shamirzaev, A.S. Romanyuk, P. Tronc,