| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355634 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠(112¯2) and (112¯0) GaN/AlN quantum dots as a candidate for light emitting devices. ⺠Elastic relaxation scheme shows similarity regardless the type of growth. ⺠Spontaneous polarisation follows polar [0 0 0 1] orientation and localisation phenomena is observed. ⺠Semipolar-to-nonpolar orientations of a buried QD results in reduction of the electrostatic potential value, peak-to-peak potential drop, and electric field.
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Authors
Grzegorz Jurczak, Toby D. Young,