The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy

► We fabricate the crack-free H-GaN epifilms which have been grown on Si (1 1 1) substrates by metal-organic chemical vapor deposition(MOCVD). ► We test the stress-sensitivity of H-GaN up to 93.5 MPa/μm which higher than C-Si which testing is 467.9 MPa/μm. ► Calculate the nonlinear error of stress-sensitivity where GaN films is 0.1639 and Si is 0.0698. ► Research the reason why the E2 (high) Raman peak of H-GaN has a blue shift under increasing displacement-loadings in the C-plane from the configurations of phonon modes in GaN.