| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355729 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠Microstructural evolution upon annealing in Ar-implanted Si was studied. ⺠Before and after annealing up to 600 °C, an amorphous layer is formed but Ar bubbles are not observed in the damage layer. ⺠After annealing at 800 °C, three buried layers of Ar bubbles are found. ⺠After annealing at 1100 °C, exfoliation occurs on the surface and microtwin lamellas form in the damage layer. ⺠A strong recrystallization occurs at 600 to 800 °C annealing.
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Authors
B.S. Li, C.H. Zhang, Y.T. Yang, L.Q. Zhang, C.L. Xu,