Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5355748 | Applied Surface Science | 2015 | 6 Pages |
Abstract
We identify that in addition to misfit also the oxygen partial pressure during PLD film growth influences film stress. PLD growth in an oxygen-free environment leads to factor of two increased tensile stress in SrTiO3 on Pt(0Â 0Â 1) as compared to growth at pO2=10â4Â mbar. The role of film stoichiometry for film stress is discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J. Premper, D. Sander, J. Kirschner,