| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355849 | Applied Surface Science | 2016 | 5 Pages |
Abstract
- Nitrided silicon was formed by nitrogen neutral beam at room temperature.
- Si3N4 layer was formed at the acceleration voltage more than 20Â V.
- Formed Si3N4 layer show the effective as the passivation film in the wet etching process.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yasuhiro Hara, Tomohiro Shimizu, Shoso Shingubara,