| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355885 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠Ta/MgOx/Ni81Fe19/MgOx/Ta films were prepared by magnetron sputtering. The anisotropic magnetoresistance (AMR) increases dramatically after annealing. ⺠The chemical states of Ta and MgOx at the interface of the NiFe/MgOx/Ta films, which were prepared at the different technological conditions, were analyzed by X-ray photoelectron spectroscopy (XPS). ⺠The AMR of Ta/MgOx/Ni81Fe19/MgOx/Ta films is related to the chemical states of MgOx. These states were produced under different technical conditions and influence the film properties.
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Authors
Minghua Li, Gang Han, Yang Liu, Chun Feng, Haicheng Wang, Jiao Teng, Guanghua Yu,