| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355890 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠Ag(2 0 0) epitaxial films were grown on native oxide covered Si(1 0 0) substrates. ⺠With increased temperature the fraction of (2 0 0) oriented Ag crystallites increased. ⺠The lowest epitaxial growth temperature observed was 100 °C. ⺠For epitaxial films: a non-negligible oxygen content was noticed at the Ag/Si interface. ⺠SIMS measurement suggested local-desorption of native oxide layer during growth.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
C. Khare, J.W. Gerlach, C. Patzig, B. Rauschenbach,