| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355917 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠InGeSbTe films were fabricated via co-deposition stoichiometric GST and IST targets. ⺠As the amount of IST was increased in InGeSbTe, the value for Vth and the phase transition temperature were increased. ⺠The phase separation in InGeSbTe is caused by differences in the enthalpy change for formation and different atomic concentrations.
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Authors
Sung Jin Park, Moon Hyung Jang, Seung-Jong Park, Mann-Ho Cho, Dae-Hong Ko,