| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355931 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠The effects of buffer layer and annealing on properties of TZO films were studied. ⺠All films exhibited strong (0 0 2) diffraction peaks of hexagonal structure. ⺠The buffered TZO films had lower resistivity and higher energy band gap. ⺠The decrease in resistivity was mainly attributed to increase in Hall mobility. ⺠Optimal electrical and optical properties were obtained after annealing at 500 °C.
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Authors
Y.C. Lin, C.Y. Hsu, S.K. Hung, C.H. Chang, D.C. Wen,