Article ID Journal Published Year Pages File Type
5355947 Applied Surface Science 2012 5 Pages PDF
Abstract
► GaN and InN layers are grown by pulsed migration enhanced epitaxial growth. ► Presence of Ga- and In-metal droplets is identified by nanoindentation. ► The method is confirmed for In-droplets on InN layers by XRD and etching with HCl. ► AFM phase-contrast does not conform to the surface material distribution.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Investigation of the presence of metal droplets after pulsed InN and GaN epitaxial growth using atomic force microscopy and nanoindentation
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