| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355958 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠The influence of post-annealing conditions on the properties of p-type ZnO:(Ag,N) films was investigated. ⺠Transition from n-type to p-type conduction occurred at the annealing temperature of 400 °C. ⺠The hole concentration first increases and then decreases with increasing annealing temperature. The optimum annealing temperature is about 500 °C. ⺠The ZnO:(Ag,N) films exhibit a strong ultraviolet emission after annealing in O2.
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Authors
Li Duan, Wenxue Zhang, Xiaochen Yu, Ziqiang Jiang, Lijun Luan, Yongnan Chen, Donglin Li,