| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5355978 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠Open-volume defects could be influenced by annealing ambient in He-implanted silicon. ⺠Void concentration decreases with the increase in the thickness of epitaxy.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
B.S. Li, C.H. Zhang, Y.R. Zhong, D.N. Wang, L.H. Zhou, Y.T. Yang, L.Q. Zhang, H.H. Zhang, Y. Zhang, L.H. Han,