| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356009 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠Sapphire substrate is etched by H3PO4 and NaOH. ⺠The Raman scattering spectroscopy and photoetching analyses show that the substrate etched can effectively decrease the residual stress and the dislocations density in these epilayers. ⺠The X-ray diffraction analysis shows the process can reduce the value of the FWHM.
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Authors
Junping Mei, Xinjian Xie, Qiuyan Hao, Weina Jing, Caichi Liu,