| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356014 | Applied Surface Science | 2011 | 9 Pages |
Abstract
⺠Understanding the electrical properties of semiconducting thin films is essential in device fabrication. In this study, we employed dielectric and relaxation analysis of nanocrystalline bismuth sulphide thin films. ⺠The information about the conduction of free charges under the application of an external electric field was explored using Al/BiSnc/Al structures. ⺠The inter-relationship between optical band gap energy and conduction properties of BiS thin films was explored. ⺠AC conductivity showed that the correlated barrier hopping model is the appropriate mechanism for the electron transport of BiS films. ⺠The results discussed in this report with necessary basic theoretical models were highly informative for understand the electrical properties of semiconducting thin films.
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Authors
K. Mageshwari, R. Sathyamoorthy, P. Sudhagar, Yong Soo Kang,