| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356019 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠Interfacial reaction of barrierless Cu(RuTaNx)/GaAs structure is clarified. ⺠The structure shows electrical rectifying properties upon annealing at 550 °C. ⺠The formation of quasi ohmic contact is further confirmed by XRD, TEM and EDS.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
W.K. Leau, J.P. Chu, C.H. Lin,