Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5356019 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠Interfacial reaction of barrierless Cu(RuTaNx)/GaAs structure is clarified. ⺠The structure shows electrical rectifying properties upon annealing at 550 °C. ⺠The formation of quasi ohmic contact is further confirmed by XRD, TEM and EDS.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
W.K. Leau, J.P. Chu, C.H. Lin,