Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5356081 | Applied Surface Science | 2016 | 30 Pages |
Abstract
The electronic characteristics of group IV and VI atoms-doped arsenene are investigated by means of first-principles methods. The results show that the influences of group IV and VI impurities are obvious on electronic structures in the arsenene. The spin-up and spin-down states induced by C, Si, Ge and O substituting As atoms lie on the both sides of Fermi level in the arsenene, and induce deeper impurity states with total magnetic moment 1 μB. However, Te substituting As atom is the most possible n-type doping due to the shallowest transition level. These results are useful to further investigate experimentally the electronic structures and magnetic properties of group IV and VI atoms-doped arsenene nanosheets.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Juan Du, Congxin Xia, Tianxing Wang, Xu Zhao, Xiaoming Tan, Shuyi Wei,