| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356137 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠Si1âxGex/Si pseudomorphic layers were synthesized by pulsed laser induced epitaxy. ⺠We performed strain and concentration measurements at the nanometer scale. ⺠Ge profiles are graded from the interface to the surface due segregation effects. ⺠The Ge profile is largely influenced by the temporal characteristics of the laser. ⺠A double peak laser pulse induces a two-stage solidification process.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
L. Vincent, F. Fossard, T. Kociniewski, L. Largeau, N. Cherkashin, M.J. Hÿtch, D. Debarre, T. Sauvage, A. Claverie, J. Boulmer, D. Bouchier,