Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5356141 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠Optically controlled GILD laser doping process reaches 3% B in Si by 0.03% steps. ⺠GILD made B-doped Si pseudomorphic layers at up to 3% B/Si by controlled 0.03% steps. ⺠4-Point probe, XRD and FTIR reflectance show coherent results on GILD-doped Si. ⺠Drude model and FTIR reflectance give B density in Si:B layers up to 6 Ã 1020 cmâ3.
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Authors
A. Bhaduri, T. Kociniewski, F. Fossard, J. Boulmer, D. Débarre,