| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356286 | Applied Surface Science | 2015 | 5 Pages |
Abstract
- Single ZnSe-ZnO nanowire axial p-n junction is fabricated by regioselectively oxidizing p-type ZnSe NW in air.
- The axial p-n junction presents pronounced rectifying behavior.
- A high performance UV light photodetector was constructed based on the axial p-n junction.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xiwei Zhang, Dan Hu, Zhenjie Tang, Dongwei Ma,