| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356419 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠Improvement of the crystallinity of ZnO film by Post-deposition annealing. ⺠Decrease of resistivity of ZnO film by post-deposition annealing. ⺠Formation of oxygen vacancy in ZnO film with desorption of O2. ⺠Recover of the resistivity by annealing in O2. ⺠The oxygen vacancies are compensated by annealing in O2 with diffusing into the film.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Takahiro Hiramatsu, Mamoru Furuta, Tokiyoshi Matsuda, Chaoyang Li, Takashi Hirao,