| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356460 | Applied Surface Science | 2011 | 8 Pages |
Abstract
⺠Sputtering technique has been used for the deposition of AgGaSe2 thin films. ⺠There was a pronounce effect of post-annealing on chemical composition of samples. ⺠Mono phase AgGaSe2 was obtained at 600 °C annealing temperature. ⺠Band gap values were found to be varying between 1.55 and 1.77 eV. ⺠The crystal-field and spin-orbit splitting levels were resolved.
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Authors
H. Karaagac, M. Parlak,