Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5356583 | Applied Surface Science | 2015 | 27 Pages |
Abstract
Boron antimonide films (BSb) were successfully deposited by pulsed laser deposition technique on glass, fused silica and silicon substrates by using a target prepared by admixing boron and antimony powders in appropriate proportions. Nd-YAG laser was used to ablate the target. Films deposited at substrate temperatures of 673Â K and above showed zinc blende structure. Grain growth in the films was observed in films deposited at higher temperatures. Films deposited on Si(1Â 0Â 0) substrates at higher deposition temperatures indicated lower residual strain. SIMS studies indicated very uniform distribution of B and Sb in the whole bulk of the films. XPS spectra indicated characteristic peaks at â¼34.87Â eV for Sb4d, â¼188.1Â eV for B1s, â¼765.5Â eV for Sb3p3/2, â¼539Â eV for Sb3d3/2 and â¼812.8Â eV for Sb3p1/2. Raman peaks for BSb were located at â¼64Â cmâ1, 152Â cmâ1, 595Â cmâ1 and 821Â cmâ1.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. Das, R. Bhunia, S. Hussain, R. Bhar, B.R. Chakraborty, A.K. Pal,