Article ID Journal Published Year Pages File Type
5356709 Applied Surface Science 2012 7 Pages PDF
Abstract
► Atomic layer deposition of erbium oxide from (CpMe)3Er and ozone. ► Stoichiometric erbium oxide atomic layer deposition. ► Carbon-free atomic layer deposited erbium oxide. ► Interfacial erbium silicate formation at 800 °C or higher temperatures. ► Hysteresis of 50 mV and leakage current density of 10−7 A cm−2 at 1 MV cm−1.
Keywords
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Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(1 0 0) using (CpMe)3Er precursor and ozone
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