Article ID Journal Published Year Pages File Type
5356722 Applied Surface Science 2012 5 Pages PDF
Abstract
► The high quality of i-ZnO film could be deposited by a vapor cooling condensation system. ► The i-ZnO/(NH4)2Sx-treated AlGaN MOS diodes shows low interface density of 2.95 × 1011 cm−2 eV−1. ► The band alignment of the i-ZnO/AlGaN interface was analyzed by XPS and CNL model. ► The band offset of the i-ZnO/AlGaN interface was increased by the (NH4)2Sx surface treatment.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Performance improvement mechanisms of i-ZnO/(NH4)2Sx-treated AlGaN MOS diodes
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